SML100A9 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk 6/99 v dss i d i dm v gs v gsm p d t j , t stg t l i ar e ar e as drain C source voltage continuous drain current pulsed drain current 1 gate C source voltage gate C source voltage transient total power dissipation @ t case = 25c derate linearly operating and storage junction temperature range lead temperature : 0.063 from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 2 nCchannel enhancement mode high voltage power mosfets 1000 9 36 30 40 200 1.6 C55 to 150 300 9 30 1210 v a a v w w/c c a mj absolute maximum ratings (t case = 25c unless otherwise stated) 1) repetitive rating: pulse width limited by maximum junction temperature. 2) starting t j = 25c, l = 29.88mh, r g = 25 w , peak i l = 9a v dss 1000v i d(cont) 9a r ds(on) 1.100 w w ? faster switching ? lower leakage ? toC3 hermetic package starmos is a new generation of high voltage nCchannel enhancement mode power mosfets. this new technology minimises the jfet effect, increases packing density and reduces the on-resistance. starmos also achieves faster switching speeds through optimised gate layout. d s g 12 3 (case) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 3.84 (0.151) 4.09 (0.161) 1.47 (0.058) 1.60 (0.063) 7.92 (0.312) 12.70 (0.50) 22.23 (0.875) max. 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) toC3 package outline. dimensions in mm (inches) pin 1 C gate pin 2 C source case C drain
SML100A9 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk 6/99 characteristic test conditions min. typ. max. unit c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f characteristic test conditions min. typ. max. unit 9 36 1.3 700 9 i s i sm v sd t rr q rr (body diode) (body diode) v gs = 0v , i s = C i d [cont.] i s = C i d [cont.] , dl s / dt = 100a/ m s i s = C i d [cont.] , dl s / dt = 100a/ m s continuous source current pulsed source current 1 diode forward voltage 2 reverse recovery time reverse recovery charge a v ns m c characteristic min. typ. max. unit 0.62 30 r q jc r q ja junction to case junction to ambient c/w source C drain diode ratings and characteristics thermal characteristics 1) repetitive rating: pulse width limited by maximum junction temperature. 2) pulse test: pulse width < 380 m s , duty cycle < 2% 3) see milCstdC750 method 3471 input capacitance output capacitance reverse transfer capacitance total gate charge 3 gate C source charge gate C drain (miller) charge turnCon delay time rise time turn-off delay time fall time v gs = 0v v ds = 25v f = 1mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 1.6 w pf nc ns 3050 3660 280 390 135 200 150 225 16 24 70 105 12 24 11 22 55 85 12 24 caution electrostatic sensitive devices. anti-static procedures must be followed. characteristic test conditions min. typ. max. unit bv dss i dss i gss v gs(th) i d(on) r ds(on) v gs = 0v , i d = 250 m a v ds = v dss v ds = 0.8v dss , t c = 125c v gs = 30v , v ds = 0v v ds = v gs , i d = 1.0ma v ds > i d(on) x r ds(on) max v gs = 10v v gs = 10v , i d = 0.5 i d [cont.] drain C source breakdown voltage zero gate voltage drain current (v gs = 0v) gate C source leakage current gate threshold voltage on state drain current 2 drain C source on state resistance 2 1000 25 250 100 24 9 1.100 v m a na v a w static electrical ratings (t case = 25c unless otherwise stated) dynamic characteristics
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